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ADVANCE INFORMATION
5 VOLT AUTOMOTIVE BOOT BLOCK FLASH MEMORY
AB28F200BR, AB28F400BR (x8/x16)
Intel SmartVoltage Technology 5 V or 12 V Program/Erase 5 V Read Operation Very High Performance Read 80 ns Max. Access Time, 40 ns Max. Output Enable Time Low Power Consumption Maximum 70 mA Read Current at 5V x8/x16-Selectable Input/Output Bus High Performance 16- or 32-bit CPUs Optimized Array Blocking Architecture One 16-KB Protected Boot Block Two 8-KB Parameter Blocks One 96-KB Main Block 128-KB Main Blocks Top or Bottom Boot Locations Hardware-Protection for Boot Block Software EEPROM Emulation with Parameter Blocks Automotive Temperature Operation -40 C to +125 C Extended Cycling Capability 30,000 Block Erase Cycles for Parameter Blocks 1,000 Block Erase Cycles for Main Blocks
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Automated Word/Byte Program and Block Erase Industry-Standard Command User Interface Status Registers Erase Suspend Capability SRAM-Compatible Write Interface Automatic Power Savings Feature 1 mA Typical I CC Active Current in Static Operation Reset/Deep Power-Down Input 0.2 A ICCTypical Provides Reset for Boot Operations Hardware Data Protection Feature Write Lockout during Power Transitions Industry-Standard Surface Mount Packaging 44-Lead PSOP: JEDEC ROM Compatible ETOXTM Flash Technology 0.6 ETOX V Flash Technology
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May 1999
Order Number: 290648-003
Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions of Sale for such products, Intel assumes no liability whatsoever, and Intel disclaims any express or implied warranty, relating to sale and/or use of Intel products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Intel products are not intended for use in medical, life saving, or life sustaining applications. Intel may make changes to specifications and product descriptions at any time, without notice. The AB28F200BR and AB28F400BR may contain design defects or errors known as errata. Current characterized errata are available on request. Contact your local Intel sales office or your distributor to obtain the latest specifications and before placing your product order. Copies of documents which have an ordering number and are referenced in this document, or other Intel literature, may be obtained from: Intel Corporation P.O. Box 5937 Denver, CO 80217-9808 or call 1-800-548-4725 or visit Intel's website at http://www.intel.com
COPYRIGHT (c) INTEL CORPORATION 1999 CG-041493
*Other brands and names are the property of their respective owners.
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CONTENTS
PAGE PAGE 4.0 DESIGN CONSIDERATIONS ....................... 25 4.1 Power Consumption .................................. 25 4.1.1 Active Power....................................... 25 4.1.2 Automatic Power Savings (APS)......... 25 4.1.3 Standby Power ................................... 25 4.1.4 Deep Power-Down Mode .................... 26 4.2 Power-Up/Down Operation ........................ 26 4.2.1 RP# Connected to System Reset ....... 26 4.3 Board Design............................................. 26 4.3.1 Power Supply Decoupling ................... 26 4.3.2 VPP Trace on Printed Circuit Boards .. 26 5.0 ELECTRICAL SPECIFICATIONS................. 27 5.1 Absolute Maximum Ratings ....................... 27 5.2 Operating Conditions ................................. 27 5.3 Capacitance .............................................. 27 5.4 DC Characteristics--Automotive Temperature............................................. 28 5.5 AC Characteristics--Read Operations....... 34 5.6 Erase and Program Timings--Automotive Temperature............................................. 35 5.7 AC Characteristics--Write Operations....... 36 6.0 ORDERING INFORMATION ......................... 38 7.0 ADDITIONAL INFORMATION ...................... 39 APPENDIX A: Write State Machine: CurrentNext State Chart ......................................... 37 APPENDIX B: Product Block Diagram ............. 38
1.0 INTRODUCTION..............................................5 1.1 New Features in the 5 Volt Memory Products ......................................................5 1.2 Product Overview .........................................5 2.0 PRODUCT DESCRIPTION ..............................6 2.1 Pin Descriptions ...........................................6 2.2 Pinouts .........................................................9 2.3 Memory Blocking Organization.....................9 2.3.1 One 16-KB Boot Block...........................9 2.3.2 Two 8-KB Parameter Blocks..................9 2.3.3 Main Blocks - One 96-KB + Additional 128-KB Blocks......................................9 3.0 PRINCIPLES OF OPERATION .....................13 3.1 Bus Operations ..........................................13 3.1.1 Read....................................................13 3.1.2 Output Disable.....................................14 3.1.3 Standby ...............................................14 3.1.4 Word/Byte Configuration......................14 3.1.5 Deep Power-Down/Reset ....................14 3.1.6 Write ....................................................14 3.2 Modes of Operation....................................16 3.2.1 Read Array ..........................................16 3.2.2 Read Identifier .....................................16 3.2.3 Read Status Register...........................16 3.2.4 Word/Byte Program .............................17 3.2.5 Block Erase .........................................17 3.3 Boot Block Locking.....................................25 3.3.1 VPP = VIL for Complete Protection........25 3.3.2 WP# = VIL for Boot Block Locking........25 3.3.3 RP# = VHH or WP# = VIH for Boot Block Unlocking............................................25
ADVANCE INFORMATION
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REVISION HISTORY
Description Original version. This document combines the 28F200BR and 28F400BR datasheets. The 28F800BR has been added. Reset timing parameters were changed (tPLQZ removed and tPLRH added) and BYTE# timings were removed. Changed erase and program timing values. Changed ICCR max value for CMOS levels. Corrected 8 M ordering information. Removed references to AB28F800BR product, it is not available. Corrected typographical errors in document.
Date of Revision 12/15/98
Version -001
02/12/99 05/04/99
-002 -003
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1.0 1.1
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AB28F200BR, AB28F400BR
*
INTRODUCTION
This datasheet contains specifications for 2- and 4-Mbit 5 Volt Boot Block Flash memories. Section 1.0 provides a feature overview. Sections 2.0, 3.0, and 4.0 describe the product and functionality. Section 5.0 details the electrical and timing specifications for both commercial and extended temperature operation. Finally, Sections 6.0 and 7.0 provide ordering and reference information.
Write operations are no longer specified as WE#- or CE#-controlled in favor of a simpler "unified" write method, which is compatible with either of the old methods.
1.2
Product Overview
New Features in the 5 Volt Boot Block Flash Memory Products
The 5 V Boot Block memory family provides pinout-compatible flash memories at the 2-, 4-, and 8-Mbit densities. The 28F200BR and 28F400BR can be configured to operate either in 16-bit or 8-bit bus mode, with the data divided into individually erasable blocks.
The following differences distinguish the 5 V Boot Block products from their predecessors: A delay is required if the part is reset during an in-progress program or erase operation. Table 1. 5 V Boot Block Family: Feature Summary Feature VCC Read Voltage VPP Program/Erase Voltage Bus-Width Speed (ns) Automotive 80 x8: 256K x 8 x16: 128K x 16 1 x 16 KB 2 x 8 KB 1 x 96 KB 1 x 128 KB 28F200BR 28F400BR Reference Section 5.2 Section 5.2 Table 2 80 x8: 512K x 8 x16: 256K x 16 1 x 16 KB 2 x 8 KB 1 x 96 KB 3 x 128 KB Section 2.3, Figs. 2 - 5 Section 5.6
5 V 5%, 5 V 10% 5 V 10% or 12 V 5%, auto-detected 8- or 16-bit
Memory Arrangement Blocking Boot Parameter Main Boot Location Locking
Top or Bottom boot locations available Boot Block lockable using WP# and/or RP# All other blocks protectable using V PP switch Automotive: -40 C - +125 C 30,000 cycles for parameter blocks; 1,000 for main and boot blocks 44-PSOP Figure 1 Section 3.3
Operating Temperature Erase Cycling Packages
Section 5.2
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When CE# and RP# pins are at VCC, the component enters a CMOS standby mode. Driving RP# to GND enables a deep power-down mode which significantly reduces power consumption, provides write protection, resets the device, and clears the status register. A reset time (tPHQV) is required from RP# switching high until outputs are valid. Likewise, the device has a wake time (tPHEL) from RP#-high until writes to the CUI are recognized. See Section 4.2. The deep power-down mode can also be used as a device reset, allowing the flash to be reset along with the rest of the system. For example, when the flash memory powers-up, it automatically defaults to the read array mode, but during a warm system reset, where power continues uninterrupted to the system components, the flash memory could remain in a non-read mode, such as erase. Consequently, the system Reset signal should be tied to RP# to reset the memory to normal read mode upon activation of the Reset signal. This also provides protection against unwanted command writes due to invalid system bus conditions during system reset or power-up/down sequences. These devices are configurable at power-up for either byte-wide or word-wide input/output using the BYTE# pin. Please see Table 2 for a detailed description of BYTE# operations, especially the usage of the DQ15/A-1 pin. These Smart 5 memory products are available in the 44-lead PSOP (Plastic Small Outline Package), which is ROM/EPROM-compatible--as shown in Figure 1.
SmartVoltage technology enables fast factory programming and low-power designs. Specifically designed for 5 V systems, Smart 5 components support read operations at 5 V VCC and internally configure to program/erase at 5 V or 12 V. The 12 V VPP option renders the fastest program and erase performance which will increase your factory throughput. With the 5 V VPP option, VCC and VPP can be tied together for a simple 5 V design. In addition, the dedicated VPP pin gives complete data protection when VPP VPPLK. The memory array is asymmetrically divided into blocks in an asymmetrical architecture to accommodate microprocessors that boot from the top (denoted by -T suffix) or the bottom (-B suffix) of the memory map. The blocks include a hardware-lockable boot block (16,384 bytes), two parameter blocks (8,192 bytes each) and main blocks (one block of 98,304 bytes and additional block(s) of 131,072 bytes). See Figures 2-5 for memory maps. Each parameter block can be independently erased and programmed 30,000 times and main blocks can be independently erased or programmed 1,000 times at automotive temperature. Unlike erase operations, which erase all locations within a block simultaneously, each byte or word in the flash memory can be programmed independently of other memory locations. The hardware-lockable boot block provides complete code security for the kernel code required for system initialization. Locking and unlocking of the boot block is controlled by WP# and/or RP# (see Section 3.3 for details). The system processor interfaces to the flash device through a Command User Interface (CUI), using valid command sequences to initiate device automation. An internal Write State Machine (WSM) automatically executes the algorithms and timings necessary for program and erase operations. The Status Register (SR) indicates the status of the WSM and whether it successfully completed the desired program or erase operation. The Automatic Power Savings (APS) feature substantially reduces active current when the device is in static mode (addresses not switching). In APS mode, the typical I CCR current is 1 mA.
2.0
PRODUCT DESCRIPTION
This section describes the pinout and block architecture of the device family.
2.1
Pin Descriptions
The pin descriptions table details the usage of each of the device pins.
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Table 2. Pin Descriptions Symbol A0-A18 A9 Type INPUT INPUT DQ0-DQ7 DQ8-DQ15
AB28F200BR, AB28F400BR
Name and Function ADDRESS INPUTS for memory addresses. Addresses are internally latched during a write cycle. 28F200: A[0-16], 28F400: A[0-17] ADDRESS INPUT: When A9 is at V HH the signature mode is accessed. During this mode, A0 decodes between the manufacturer and device IDs. When BYTE# is at a logic low, only the lower byte of the signatures are read. DQ 15/A-1 is a don't care in the signature mode when BYTE# is low.
INPUT/ DATA INPUTS/OUTPUTS: Inputs array data on the second CE# and WE# cycle OUTPUT during a Program command. Inputs commands to the Command User Interface when CE# and WE# are active. Data is internally latched during the write cycle. Outputs array, intelligent identifier and status register data. The data pins float to tri-state when the chip is de-selected or the outputs are disabled. INPUT/ DATA INPUTS/OUTPUTS: Inputs array data on the second CE# and WE# cycle OUTPUT during a Program command. Data is internally latched during the write cycle. Outputs array data. The data pins float to tri-state when the chip is de-selected or the outputs are disabled as in the byte-wide mode (BYTE# = "0"). In the byte-wide mode DQ15/A-1 becomes the lowest order address for data output on DQ0-DQ7. INPUT CHIP ENABLE: Activates the device's control logic, input buffers, decoders and sense amplifiers. CE# is active low. CE# high de-selects the memory device and reduces power consumption to standby levels. If CE# and RP# are high, but not at a CMOS high level, the standby current will increase due to current flow through the CE# and RP# input stages. OUTPUT ENABLE: Enables the device's outputs through the data buffers during a read cycle. OE# is active low. WRITE ENABLE: Controls writes to the command register and array blocks. WE# is active low. Addresses and data are latched on the rising edge of the WE# pulse. RESET/DEEP POWER-DOWN: Uses three voltage levels (V IL, VIH, and VHH) to control two different functions: reset/deep power-down mode and boot block unlocking. It is backwards-compatible with the BX/BL products. When RP# is at logic low, the device is in reset/deep power-down mode, which puts the outputs at High-Z, resets the Write State Machine, and draws minimum current. When RP# is at logic high, the device is in standard operation. When RP# transitions from logic-low to logic-high, the device defaults to the read array mode. When RP# is at VHH, the boot block is unlocked and can be programmed or erased. This overrides any control from the WP# input.
CE#
OE# WE#
INPUT INPUT
RP#
INPUT
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AB28F200BR, AB28F400BR
Table 2. Pin Descriptions (Continued) Symbol WP# Type INPUT Name and Function
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WRITE PROTECT: Provides a method for unlocking the boot block with a logic level signal in a system without a 12 V supply. When WP# is at logic low, the boot block is locked, preventing program and erase operations to the boot block. If a program or erase operation is attempted on the boot block when WP# is low, the corresponding status bit (bit 4 for program, bit 5 for erase) will be set in the status register to indicate the operation failed. When WP# is at logic high, the boot block is unlocked and can be programmed or erased. NOTE: This feature is overridden and the boot block unlocked when RP# is at VHH. This pin can not be left floating. Because the 8-Mbit 44-PSOP package does not have enough pins, it does not include this pin and thus 12 V on RP# is required to unlock the boot block. See Section 3.3 for details on write protection.
BYTE#
INPUT
BYTE# ENABLE: Configures whether the device operates in byte-wide mode (x8) or word-wide mode (x16). This pin must be set at power-up or return from deep power-down and not changed during device operation. BYTE# pin must be controlled at CMOS levels to meet the CMOS current specification in standby mode. When BYTE# is at logic low, the byte-wide mode is enabled, where data is read and programmed on DQ0-DQ7 and DQ15/A-1 becomes the lowest order address that decodes between the upper and lower byte. DQ8-DQ14 are tri-stated during the byte-wide mode. When BYTE# is at logic high, the word-wide mode is enabled, where data is read and programmed on DQ0-DQ15.
VCC VPP
DEVICE POWER SUPPLY: 5.0 V 10% PROGRAM/ERASE POWER SUPPLY: For erasing memory array blocks or programming data in each block, a voltage either of 5 V 10% or 12 V 5% must be applied to this pin. When VPP < VPPLK all blocks are locked and protected against Program and Erase commands. GROUND: For all internal circuitry. NO CONNECT: Pin may be driven or left floating.
GND NC
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2.2 2.3
AB28F200BR, AB28F400BR
2.3.1 ONE 16-KB BOOT BLOCK
Pinouts
Intel 5 V Boot Block architecture provides upgrade paths in each package pinout up to the 4-Mbit density. The 28F200 44-lead PSOP pinout follows the industry-standard ROM/EPROM pinout, as shown in Figure 1. A pinout for the corresponding 4-Mbit component is provided on the same diagram for convenient reference. The 2-Mbit pinout is given on the chip illustration in the center, with the 4-Mbit pinout adjacent.
The boot block is intended to replace a dedicated boot PROM in a microprocessor or microcontrollerbased system. The 16-Kbyte (16,384 bytes) boot block is located at either the top (denoted by -T suffix) or the bottom (-B suffix) of the address map to accommodate different microprocessor protocols for boot code location. This boot block features hardware controllable write-protection to protect the crucial microprocessor boot code from accidental modification. The protection of the boot block is controlled using a combination of the VPP, RP#, and WP# pins, as is detailed in Section 3.3. 2.3.2 TWO 8-KB PARAMETER BLOCKS
Memory Blocking Organization
The boot block product family features an asymmetrically-blocked architecture providing system memory integration. Each block can be erased independently. The block sizes have been chosen to optimize their functionality for common applications of nonvolatile storage. For the address locations of the blocks, see the memory maps in Figures 2, 3, 4 and 5.
Each boot block component contains two parameter blocks of 8 Kbytes (8,192 bytes) each to facilitate storage of frequently updated small parameters that would normally require an EEPROM. By using software techniques, the byte-rewrite functionality of EEPROMs can be emulated. These techniques are detailed in Intel's application note, AP-604 Using Intel's Boot Block Flash Memory Parameter Blocks to Replace EEPROM. The parameter blocks are not write-protectable. 2.3.3 MAIN BLOCKS - ONE 96-KB + ADDITIONAL 128-KB BLOCKS
After the allocation of address space to the boot and parameter blocks, the remainder is divided into main blocks for data or code storage. Each device contains one 96-Kbyte (98,304 byte) block and additional 128-Kbyte (131,072 byte) blocks. The 2-Mbit has one 128-KB block and the 4-Mbit, three.
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28F400 1 44 2 43 3 42 4 41 5 40 6 39 7 38 8 37 28F200 9 36 Boot Block 10 35 11 44-Lead PSOP 34 12 0.525" x 1.110" 33 13 32 TOP VIEW 14 31 15 30 16 29 17 28 18 27 19 26 20 25 21 24 22 23 RP# WE# A8 A9 A10 A11 A12 A13 A14 A15 A16 BYTE# GND DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC RP# WE# A8 A9 A10 A11 A12 A13 A14 A15 A16 BYTE# GND DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC
0648-01
28F400 VPP WP# A17 A7 A6 A5 A4 A3 A2 A1 A0 CE# GND OE# DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 VPP WP# NC A7 A6 A5 A4 A3 A2 A1 A0 CE# GND OE# DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11
Figure 1. 44-Lead PSOP Pinout Diagram
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28F200-T 1FFFFH 1E000H 1DFFFH 1D000H 1CFFFH 1C000H 1BFFFH 10000H 0FFFFH 128-Kbyte Main Block 00000H 20000H 1FFFFH 16-Kbyte Boot Block 8-Kbyte Parameter Block 8-Kbyte Parameter Block 96-Kbyte Main Block 30000H 2FFFFH 3FFFFH 3E000H 3DFFFH 3D000H 3CFFFH 3C000H 3BFFFH 10000H 0FFFFH
AB28F200BR, AB28F400BR
28F400-T 16-Kbyte Boot Block 8-Kbyte Parameter Block 8-Kbyte Parameter Block 96-Kbyte Main Block
128-Kbyte Main Block
128-Kbyte Main Block
128-Kbyte Main Block 00000H
0648-02
NOTE: Word addresses shown.
Figure 2. Word-Wide x16-Mode Memory Maps (Top Boot)
3FFFFH 128-Kbyte Main Block 30000H 2FFFFH 128-Kbyte Main Block 20000H 1FFFFH 128-Kbyte Main Block 10000H 0FFFFH 96-Kbyte Main Block 04000H 03FFFH 03000H 02FFFH 02000H 01FFFH 00000H 8-Kbyte Parameter Block 8-Kbyte Parameter Block 16-Kbyte Boot Block 04000H 03FFFH 03000H 02FFFH 02000H 10FFFH 00000H 10000H 0FFFFH 96-Kbyte Main Block 8-Kbyte Parameter Block 8-Kbyte Parameter Block 16-Kbyte Boot Block 1FFFFH 128-Kbyte Main Block
28F200-B
28F400-B
0648-03
NOTE: Word addresses shown.
Figure 3. Word-Wide x16-Mode Memory Maps (Bottom Boot)
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28F200-T 28F400-T 7FFFFH 7C000H 7BFFFH 7A000H 79FFFH 78000H 77FFFH 60000H 5FFFFH 16-Kbyte Boot Block 8-Kbyte Parameter Block 8-Kbyte Parameter Block 96-Kbyte Main Block 128-Kbyte Main Block 40000H 3FFFFH 128-Kbyte Main Block 20000H 1FFFFH 128-Kbyte Main Block 00000H
0599-05
3FFFFH 3C000H 3BFFFH 3A000H 39FFFH 38000H 37FFFH 20000H 1FFFFH
16-Kbyte Boot Block 8-Kbyte Parameter Block 8-Kbyte Parameter Block 96-Kbyte Main Block
128-Kbyte Main Block 00000H
NOTE: Byte-mode addresses shown. In x8 operation, the least significant system address should be connected to A-1.
Figure 4. Byte-Wide x8-Mode Memory Maps (Top Boot)
7FFFFH 128-Kbyte Main Block 60000H 5FFFFH 128-Kbyte Main Block 40000H 3FFFFH 128-Kbyte Main Block 20000H 1FFFFH 96-Kbyte Main Block 08000H 07FFFH 06000H 05FFFH 04000H 03FFFH 00000H 8-Kbyte Parameter Block 8-Kbyte Parameter Block 16-Kbyte Boot Block 08000H 07FFFH 06000H 05FFFH 04000H 03FFFH 00000H 20000H 1FFFFH 96-Kbyte Main Block 8-Kbyte Parameter Block 8-Kbyte Parameter Block 16-Kbyte Boot Block 3FFFFH 128-Kbyte Main Block
28F200-B
28F400-B
0599-06
NOTE: Byte-mode addresses shown. In x8 operation, the least significant system address should be connected to A-1.
Figure 5. Byte-Wide x8-Mode Memory Maps (Bottom Boot) 12
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3.0
AB28F200BR, AB28F400BR
operation has completed, the device remains in read status register mode. From this mode any of the other read or write modes can be reached with the appropriate command. For example, to read data, issue the Read Array command. Additional Program or Erase commands can also be issued from this state. During program or erase operations, the array data is not available for reading or code execution, except during an erase suspend. Consequently, the software that initiates and polls progress of program and erase operations must be copied to and executed from system RAM during flash memory update. After successful completion, reads are again possible via the Read Array command. Each of the device modes will be discussed in detail in the following sections.
PRINCIPLES OF OPERATION
The system processor accesses the 5 V Boot Block memories through the Command User Interface (CUI), which accepts commands written with standard microprocessor write timings and TTLlevel control inputs. The flash can be switched into each of its three read and two write modes through commands issued to the CUI. A comprehensive chart showing the state transitions is in Appendix A. After initial device power-up or return from deep power-down mode, the device defaults to read array mode. In this mode, manipulation of the memory control pins allows array read, standby, and output disable operations. The other read modes, read identifier and read status register, can be reached by issuing the appropriate command to the CUI. Array data, identifier codes and status register results can be accessed using these commands independently from the VPP voltage. Read identifier mode can also be accessed by PROM programming equipment by raising A9 to high voltage (VID). CUI commands sequences also control the write functions of the flash memory, Program and Erase. Issuing program or erase command sequences internally latches addresses and data and initiates Write State Machine (WSM) operations to execute the requested write function. The WSM internally regulates the program and erase algorithms, including pulse repetition, internal verification, and margining of data, freeing the host processor from these tasks and allowing precise control for high reliability. To execute Program or Erase commands, VPP must be at valid write voltage (5 V or 12 V). While the WSM is executing a program operation, the device defaults to the read status register mode and all commands are ignored. Thus during the programming process, only status register data can be accessed from the device. While the WSM is executing a erase operation, the device also defaults to the read status register mode but one additional command is available, erase suspend to read, which will suspend the erase operation and allow reading of array data. The suspended erase operation can be completed by issuing the Erase Resume command. After the program or erase
3.1
Bus Operations
The local CPU reads and writes flash memory insystem. All bus cycles to or from the flash memory conform to standard microprocessor bus cycles. Four control pins dictate the data flow in and out of the component: CE#, OE#, WE#, and RP#. These bus operations are summarized in Tables 3 and 4. 3.1.1 READ
The flash memory has three read modes available, read array, read identifier, and read status. These read modes are accessible independent of the VPP voltage. RP# can be at either VIH or VHH. The appropriate read-mode command must be issued to the CUI to enter the corresponding mode. Upon initial device power-up or after exit from deep power-down mode, the device automatically defaults to read array mode. CE# and OE# must be driven active to obtain data at the outputs. CE# is the device selection control, and, when active, enables the selected memory device. OE# is the data output (DQ0-DQ15) control and when active drives the selected memory data onto the I/O bus. In read modes, WE# must be at VIH and RP# must be at VIH or VHH. Figure 13 illustrates a read cycle.
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AB28F200BR, AB28F400BR
3.1.2 OUTPUT DISABLE
With OE# at a logic-high level (VIH), the device outputs are disabled. Output pins (if available on the device) DQ0-DQ15 are placed in a highimpedance state. 3.1.3 STANDBY
operation is restored. The CUI resets to read array mode, and the status register is set to 80H. This case is shown in Figure 12A. If RP# is taken low for time tPLPH during a program or erase operation, the operation will be aborted and the memory contents at the aborted location (for a program) or block (for an erase) are no longer valid, since the data may be partially erased or written. The abort process goes through the following sequence: When RP# goes low, the device shuts down the operation in progress, a process which takes time tPLRH to complete. After this time tPLRH, the part will either reset to read array mode (if RP# has gone high during tPLRH, Figure 12B) or enter deep power-down mode (if RP# is still logic low after tPLRH, Figure 12C). In both cases, after returning from an aborted operation, the relevant time tPHQV or tPHWL/tPHEL must be waited before a read or write operation is initiated, as discussed in the previous paragraph. However, in this case, these delays are referenced to the end of tPLRH rather than when RP# goes high. As with any automated device, it is important to assert RP# during system reset. When the system comes out of reset, processor expects to read from the flash memory. Automated flash memories provide status information when read during program or block erase operations. If a CPU reset occurs with no flash memory reset, proper CPU initialization may not occur because the flash memory may be providing status information instead of array data. Intel's Flash memories allow proper CPU initialization following a system reset through the use of the RP# input. In this application, RP# is controlled by the same RESET# signal that resets the system CPU. 3.1.6 WRITE
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Deselecting the device by bringing CE# to a logichigh level (VIH) places the device in standby mode which substantially reduces device power consumption. In standby, outputs DQ0-DQ15 are placed in a high-impedance state independent of OE#. If deselected during program or erase operation, the device continues functioning and consuming active power until the operation completes. 3.1.4 WORD/BYTE CONFIGURATION
The 16-bit devices can be configured for either an 8-bit or 16-bit bus width by setting the BYTE# pin before power-up. When BYTE# is set to logic low, the byte-wide mode is enabled, where data is read and programmed on DQ0-DQ7 and DQ15/A-1 becomes the lowest order address that decodes between the upper and lower byte. DQ8-DQ14 are tri-stated during the byte-wide mode. When BYTE# is at logic high, the word-wide mode is enabled, and data is read and programmed on DQ0-DQ15. 3.1.5 DEEP POWER-DOWN/RESET
RP# at VIL initiates the deep power-down mode, also referred to as reset mode. From read mode, RP# going low for time tPLPH deselects the memory, places output drivers in a high-impedance state, and turns off all internal circuits. After return from power-down, a time tPHQV is required until the initial memory access outputs are valid. A delay (tPHWL or tPHEL) is required after return from power-down before a write can be initiated. After this wake-up interval, normal
The CUI does not occupy an addressable memory location. Instead, commands are written into the CUI using standard microprocessor write timings when WE# and CE# are low, OE# = VIH, and the proper address and data (command) are presented. The address and data for a command are latched on the rising edge of WE# or CE#, whichever goes high first. Figure 14 illustrates a write operation.
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Mode Read Output Disable Standby Deep Power-Down Intelligent Identifier (Mfr.) Intelligent Identifier (Device) Write
AB28F200BR, AB28F400BR
Table 3. Bus Operations for Word-Wide Mode (BYTE# = VIH) Notes 1,2,3 RP# VIH VIH VIH 9 4 4,5 6,7,8 VIL VIH VIH VIH CE# VIL VIL VIH X VIL VIL VIL OE# VIL VIH X X VIL VIL VIH WE# VIH VIH X X VIH VIH VIL A9 X X X X VID VID X A0 X X X X VIL VIH X VPP X X X X X X X DQ0-15 DOUT High Z High Z High Z 0089 H See Table 5 DIN
Table 4. Bus Operations for Byte-Wide Mode (BYTE# = VIL) Mode Read Output Disable Standby Deep PowerDown Intelligent Identifier (Mfr.) Intelligent Identifier (Device) Write 9 Note 1,2,3 RP# VIH VIH VIH VIL CE# VIL VIL VIH X OE# VIL VIH X X WE# VIH VIH X X A9 X X X X A0 X X X X A-1 X X X X VPP X X X X DQ0-7 DOUT High Z High Z High Z DQ8-14 High Z High Z High Z High Z
4
VIH
VIL
VIL
VIH
VID
VIL
X
X
89H
High Z
4,5
VIH
VIL
VIL
VIH
VID
VIH
X
X
See Table 5 DIN
High Z
6,7,8
VIH
VIL
VIH
VIL
X
X
X
X
High Z
NOTES: 1. Refer to DC Characteristics. 2. X can be VIL, VIH for control pins and addresses, VPPLK or VPPH for VPP. 3. See DC Characteristics for VPPLK, VPPH1, VPPH2, VHH, VID voltages. 4. Manufacturer and device codes may also be accessed via a CUI write sequence, A0 selects, all other addresses = X. 5. See Table 5 for device IDs. 6. Refer to Table 7 for valid DIN during a write operation. 7. Command writes for block erase or program are only executed when VPP = VPPH1 or VPPH2. 8. To program or erase the boot block, hold RP# at VHH or WP# at VIH. See Section 3.3. 9. RP# must be at GND 0.2 V to meet the maximum deep power-down current specified.
ADVANCE INFORMATION
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AB28F200BR, AB28F400BR
E
3.2.2 READ IDENTIFIER To read the manufacturer and device codes, the device must be in intelligent identifier read mode, which can be reached using two methods: by writing the intelligent identifier command (90H) or by taking the A9 pin to VID. Once in intelligent identifier read mode, A0 = 0 outputs the manufacturer's identification code and A0 = 1 outputs the device code. In byte-wide mode, only the lower byte of the above signatures is read (DQ15/A-1 is a "don't care" in this mode). See Table 5 for product signatures. To return to read array mode, write a Read Array command (FFH). 3.2.3 READ STATUS REGISTER The status register indicates when a program or erase operation is complete, and the success or failure of that operation. The status register is output when the device is read in read status register mode, which can be entered by issuing the Read Status (70H) command to the CUI. This mode is automatically entered when a program or erase operation is initiated, and the device remains in this mode after the operation has completed. Status register bit codes are defined in Table 8. The status register bits are output on DQ0-DQ7, in both byte-wide (x8) or word-wide (x16) mode. In the word-wide mode, the upper byte, DQ8-DQ15, outputs 00H during a Read Status command. In the byte-wide mode, DQ8-DQ14 are tri-stated and DQ15/A-1 retains the low order address function. Note that the contents of the status register are latched on the falling edge of OE# or CE#, whichever occurs last in the read cycle. This prevents possible bus errors which might occur if status register contents change while being read. CE# or OE# must be toggled with each subsequent status read, or the status register will not indicate completion of a program or erase operation. Issue a Read Array (FFH) command to return to read array. 3.2.3.1 Clearing the Status Register
3.2
Modes of Operation
The flash memory has three read modes and two write modes. The read modes are read array, read identifier, and read status. The write modes are program and block erase. An additional mode, erase suspend to read, is available only during block erasures. These modes are reached using the commands summarized in Table 6. A comprehensive chart showing the state transitions is in Appendix A. 3.2.1 READ ARRAY
After initial device power-up or return from deep power-down mode, the device defaults to read array mode. This mode can also be entered by writing the Read Array command (FFH). The device remains in this mode until another command is written. Data is read by presenting the address of the read location in conjunction with a read bus operation. Once the WSM has started a program or block erase operation, the device will not recognize the Read Array command until the WSM completes its operation unless the WSM is suspended via an Erase Suspend command. The Read Array command functions independently of the VPP voltage and RP# can be VIH or VHH. During system design, consideration should be taken to ensure address and control inputs meet required input slew rates of <10 ns as defined in Figures 9 and 10. Table 5. Intelligent Identifier Codes Product Mfr. ID Device ID -T Top Boot 28F200 28F400 0089 H 0089 H 2274 H 4470 H -B Bottom Boot 2275 H 4471 H
NOTE: In byte-mode, the upper byte will be tri-stated.
Status register bits SR.5, SR.4, and SR.3 are set to "1"s when appropriate by the WSM but can only be reset by the Clear Status Register command.
16
ADVANCE INFORMATION
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3.2.4
AB28F200BR, AB28F400BR
address will be latched at the rising edge of WE# or CE#, whichever comes first. Internally, the WSM will program all bits in the block to "0," verify all bits are adequately programmed to "0," erase all bits to "1," and verify that all bits in the block are sufficiently erased. After block erase command sequence is issued, the device automatically enters read status register mode and outputs status register data when read (see Figure 7). The completion of the erase event is indicated on status register bit SR.7. When an erase is complete, check status register bit SR.5 for an error flag ("1"). The cause of a failure may be found on SR.3, which indicates "1" if VPP was out of program/erase voltage range (VPPH1 or VPPH2). If an Erase Set-Up (20H) command is issued but not followed by an Erase Confirm (D0H) command, then both the program status (SR.4) and the erase status (SR.5) will be set to "1." The status register should be cleared before the next operation. Since the device remains in status register read mode after erasing is completed, a command must be issued to switch to another mode before beginning a different operation. 3.2.5.1 Erase Suspend/Resume
These bits indicate various failure conditions (see Table 8). By requiring system software to reset these bits, several operations (such as cumulatively erasing multiple blocks or programming several bytes in sequence) may be performed before polling the status register to determine if an error occurred during the series. Issue the Clear Status Register command (50H) to clear the status register. It functions independently of the applied VPP voltage and RP# can be VIH or VHH. This command is not functional during block erase suspend modes. Resetting the part with RP# also clears the status register. WORD/BYTE PROGRAM
Word or byte program operations are executed by a two-cycle command sequence. Program Set-Up (40H) is issued, followed by a second write that specifies the address and data (latched on the rising edge of WE# or CE#, whichever comes first). The WSM then takes over, controlling the program and program verify algorithms internally. While the WSM is working, the device automatically enters read status register mode and remains there after the word/byte program is complete. (see Figure 6). The completion of the program event is indicated on status register bit SR.7. When a word/byte program is complete, check status register bit SR.4 for an error flag ("1"). The cause of a failure may be found on SR.3, which indicates "1" if VPP was out of program/erase voltage range (VPPH1 or VPPH2). The status register should be cleared before the next operation. The internal WSM verify only detects errors for "1"s that do not successfully write to "0"s. Since the device remains in status register read mode after programming is completed, a command must be issued to switch to another mode before beginning a different operation. 3.2.5 BLOCK ERASE
The Erase Suspend command (B0H) interrupts an erase operation in order to read data in another block of memory. While the erase is in progress, issuing the Erase Suspend command requests that the WSM suspend the erase algorithm after a certain latency period. After issuing the Erase Suspend command, write the Read Status Register command, then check bit SR.7 and SR.6 to ensure the device is in the erase suspend mode (both will be set to "1"). This check is necessary because the WSM may have completed the erase operation before the Erase Suspend command was issued. If this occurs, the Erase Suspend command would switch the device into read array mode. See Appendix A for a comprehensive chart showing the state transitions. When erase has been suspended, a Read Array command (FFH) can be written to read from blocks other than that which is suspended. The only other valid commands at this time are Erase Resume (D0H) or Read Status Register.
A block erase changes all block data to 1's (FFFFH) and is initiated by a two-cycle command. An Erase Set-Up command (20H) is issued first, followed by an Erase Confirm command (D0H) along with an address within the target block. The
ADVANCE INFORMATION
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AB28F200BR, AB28F400BR
To resume the erase operation, enable the chip by During erase suspend mode, the chip can go into a taking CE# to VIL, then issue the Erase Resume pseudo-standby mode by taking CE# to VIH, which command, which continues the erase sequence to completion. As with the end of a standard erase reduces active current draw. VPP must remain at operation, the status register must be read, cleared, VPPH1 or VPPH2 (the same VPP level used for block and the next instruction issued in order to continue. erase) while erase is suspended. RP# must also remain at VIH or VHH (the same RP# level used for block erase). Table 6. Command Codes and Descriptions Code Device Mode 00 FF 40 Invalid/ Reserved Read Array Program Set-Up Description Unassigned commands that should not be used. Intel reserves the right to redefine these codes for future functions. Places the device in read array mode, so that array data will be output on the data pins. Sets the CUI into a state such that the next write will load the Address and Data registers. The next write after the Program Set-Up command will latch addresses and data on the rising edge and begin the program algorithm. The device then defaults to the read status mode, where the device outputs status register data when OE# is enabled. To read the array, issue a Read Array command. To cancel a program operation after issuing a Program Set-Up command, write all 1's (FFH for x8, FFFFH for x16) to the CUI. This will return to read status register mode after a standard program time without modifying array contents. If a program operation has already been initiated to the WSM this command cannot cancel that operation in progress. 10 20 Alternate Prog Set-Up Erase Set-Up (See 40H/Program Set-Up) Prepares the CUI for the Erase Confirm command. If the next command is not an Erase Confirm command, then the CUI will set both the program status (SR.4) and erase status (SR.5) bits of the status register to a "1," place the device into the read status register state, and wait for another command without modifying array contents. This can be used to cancel an erase operation after the Erase Set-Up command has been issued. If an operation has already been initiated to the WSM this can not cancel that operation in progress. If the previous command was an Erase Set-Up command, then the CUI will latch address and data, and begin erasing the block indicated on the address pins. During erase, the device will respond only to the Read Status Register and Erase Suspend commands and will output status register data when OE# is toggled low. Status register data is updated by toggling either OE# or CE# low. Issuing this command will begin to suspend erase operation. The status register will indicate when the device reaches erase suspend mode. In this mode, the CUI will respond only to the Read Array, Read Status Register, and Erase Resume commands and the WSM will also set the WSM status bit to a "1" (ready). The WSM will continue to idle in the SUSPEND state, regardless of the state of all input control pins except RP#, which will immediately shut down the WSM and the remainder of the chip, if it is made active. During a suspend operation, the data and address latches will remain closed, but the address pads are able to drive the address into the read path. See Section 3.2.5.1. This command is useful only while an erase operation is in progress and may reset to read array mode in other circumstances. (See Appendix A for state transition table.)
E
D0
Erase Resume/ Erase Confirm Erase Suspend
B0
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Code Device Mode 70 Read Status Register 50 Clear Status Register 90 Intelligent Identifier
AB28F200BR, AB28F400BR
Table 6. Command Codes and Descriptions (Continued) Description Puts the device into the read status register mode, so that reading the device outputs status register data, regardless of the address presented to the device. The device automatically enters this mode after program or erase has completed. This is one of the two commands that is executable while the WSM is operating. See Section 3.2.3. The WSM can only set the program status and erase status bits in the status register to "1"; it cannot clear them to "0." The status register operates in this fashion for two reasons. The first is to give the host CPU the flexibility to read the status bits at any time. Second, when programming a string of bytes, a single status register query after programming the string may be more efficient, since it will return the accumulated error status of the entire string. See Section 3.2.3.1. Puts the device into the intelligent identifier read mode, so that reading the device will output the manufacturer and device codes. (A0 = 0 for manufacturer, A0 = 1 for device, all other address inputs are ignored). See Section 3.2.2.
ADVANCE INFORMATION
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AB28F200BR, AB28F400BR
E
Table 7. Command Bus Definitions First Bus Cycle Second Bus Cycle Oper Addr Data Note Oper Write 2,4 3 3 6,7 5 Write Write Write Write Write Write Write Addr X X X X PA BA X X Data FFH 90H 70H 50H 40H/10H 20H B0H D0H Write Write PA BA PD D0H Read Read IA X IID SRD
Command Read Array Intelligent Identifier Read Status Register Clear Status Register Word/Byte Program Block Erase/Confirm Erase Suspend Erase Resume
ADDRESS BA = Block Address IA = Identifier Address PA = Program Address X = Don't Care
DATA SRD = Status Register Data IID = Identifier Data PD = Program Data
NOTES:
1. 2. 3. 4. 5. 6. 7. 8. Bus operations are defined in Tables 3 and 4. IA = Identifier Address: A0 = 0 for manufacturer code, A0 = 1 for device code. SRD - Data read from Status Register. IID = Intelligent Identifier Data. Following the Intelligent Identifier command, two read operations access manufacturer and device codes. BA = Address within the block being erased. PA = Address to be programmed. PD = Data to be programmed at location PA. Either 40H or 10H commands is valid. When writing commands to the device, the upper data bus [DQ8-DQ15] = X which is either VIL or VIH, to minimize current draw.
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ADVANCE INFORMATION
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WSMS 7 ESS 6
AB28F200BR, AB28F400BR
Table 8. Status Register Bit Definition ES 5 DWS 4 VPPS 3 R 2 NOTES: R 1 R 0
SR.7 WRITE STATE MACHINE STATUS 1 = Ready (WSMS) 0 = Busy SR.6 = ERASE-SUSPEND STATUS (ESS) 1 = Erase Suspended 0 = Erase In Progress/Completed SR.5 = ERASE STATUS (ES) 1 = Error In Block Erasure 0 = Successful Block Erase
Check WSM bit first to determine word/byte program or block erase completion, before checking program or erase status bits. When Erase Suspend is issued, WSM halts execution and sets both WSMS and ESS bits to "1." ESS bit remains set to "1" until an Erase Resume command is issued. When this bit is set to "1," one of the following has occurred: 1. VPP out of range. 2. WSM has applied the max number of erase pulses to the block and is still unable to verify successful block erasure. 3. Erase Set-Up command was followed by a command other than Erase Confirm.
SR.4 = PROGRAM STATUS (DWS) 1 = Error in Byte/Word Program 0 = Successful Byte/Word Program
When this bit is set to "1," one of the following has occurred: 1. VPP out of range. 2. WSM has applied the max number of program pulses and is still unable to verify a successful program. 3. Erase Set-Up command was followed by a command other than Erase Confirm.
SR.3 = VPP STATUS (VPPS) 1 = VPP Low Detect, Operation Abort 0 = VPP OK
The VPP status bit does not provide continuous indication of VPP level. The WSM interrogates VPP level only after the Program or Erase command sequences have been entered, and informs the system if V PP is out of range. The VPP status bit is not guaranteed to report accurate feedback between VPPLK and VPPH. These bits are reserved for future use and should be masked out when polling the status register.
SR.2-SR.0 = RESERVED FOR FUTURE ENHANCEMENTS (R)
ADVANCE INFORMATION
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AB28F200BR, AB28F400BR
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Bus Operation Write
Start
Command
Setup Program Program
Comments Data = 40H Addr = Word/Byte to Program Data = Data to Program Addr = Location to Program
Write 40H, Word/Byte Address
Write Write Word/Byte Data/Address Read Read Status Register
Status Register Data Toggle CE# or OE# to Update SRD.
Standby
NO SR.7 = 1 ? YES Full Status Check if Desired
Check SR.7 1 = WSM Ready 0 = WSM Busy
Repeat for subsequent word/byte program operations. SR Full Status Check can be done after each word/byte program operation, or after a sequence of word/byte programs. Write FFH after the last program operation to reset device to read array mode.
Word/Byte Program Complete
FULL STATUS CHECK PROCEDURE
Read Status Register Data (See Above)
Bus Operation Standby
Command
Comments
SR.3 = 0
1
Check SR.3 1 = VPP Low Detect
VPP Range Error Standby Check SR.4 1 = Word Byte Program Error
1 SR.4 = 0 Word/Byte Program Successful
Word/Byte Program Error SR.3 MUST be cleared, if set during a program attempt, before further attempts are allowed by the Write State Machine. SR.4 is only cleared by the Clear Status Register Command, in cases where multiple bytes are programmed before full status is checked. If error is detected, clear the Status Register before attempting retry or other error recovery.
0599-07
Figure 6. Automated Word/Byte Program Flowchart
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ADVANCE INFORMATION
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Start Bus Operation Write
Command
AB28F200BR, AB28F400BR
Comments
Write 20H, Block Address
Erase Setup
Data = 20H Addr = Within Block to be Erased Data = D0H Addr = Within Block to be Erased Status Register Data Toggle CE# or OE# to Update Status Register
Write Write D0H and Block Address
Read
Erase Confirm
Read Status Register NO 0 SR.7 =
Suspend Erase Loop Suspend Erase YES
Standby
Check SR.7 1 = WSM Ready 0 = WSM Busy
1 Full Status Check if Desired
Repeat for subsequent block erasures. Full Status Check can be done after each block erase, or after a sequence of block erasures. Write FFH after the last operation to reset device to read array mode.
Block Erase Complete
FULL STATUS CHECK PROCEDURE
Read Status Register Data (See Above)
Bus Operation Standby
Command
Comments Check SR.3 1 = VPP Low Detect Check SR.4,5 Both 1 = Command Sequence Error Check SR.5 1 = Block Erase Error
SR.3 = 0
1
VPP Range Error Standby
1 SR.4,5 = 0 1 SR.5 = 0 Block Erase Successful
Command Sequence Error
Standby
Block Erase Error
SR.3 MUST be cleared, if set during an erase attempt, before further attempts are allowed by the Write State Machine. SR.5 is only cleared by the Clear Status Register Command, in cases where multiple blocks are erase before full status is checked. If error is detected, clear the Status Register before attempting retry or other error recovery.
0599-08
Figure 7. Automated Block Erase Flowchart
ADVANCE INFORMATION
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AB28F200BR, AB28F400BR
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Bus Operation Write Command Erase Suspend Read Status Comments Data = B0H Addr = X Data = 70H Addr = X Status Register Data Toggle OE# or CE# to Update Status Register Addr = X Check SR.7 1 = WSM Ready 0 = WSM Busy Check SR.6 1 = Erase Suspended 0 = Erase Completed Read Array Data = FFH Addr = X Read array data from block other than the one being programmed Erase Resume Data = D0H Addr = X Write Read Standby Standby Write
Start
Write B0H
Write 70H
Read Status Register 0 1 SR.6 = 1 Write FFH 0 Erase Resumed
SR.7 =
Read
Write
Read Array Data
Done Reading Yes Write D0H
No
Write FFH
Erase Resumed
Read Array Data
0599-09
Figure 8. Erase Suspend/Resume Flowchart
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3.3
3.3.1 3.3.2
AB28F200BR, AB28F400BR
Table 9. Write Protection Truth Table VPP VIL VPPLK VPPLK VPPLK VPPLK RP# X VIL VHH VIH VIH WP# X X X VIL VIH Write Protection Provided All Blocks Locked All Blocks Locked (Reset) All Blocks Unlocked Boot Block Locked All Blocks Unlocked
Boot Block Locking
The boot block family architecture features a hardware-lockable boot block so that the kernel code for the system can be kept secure while the parameter and main blocks are programmed and erased independently as necessary. Only the boot block can be locked independently from the other blocks. VPP = VIL FOR COMPLETE PROTECTION
For complete write protection of all blocks in the device, the VPP voltage can be held low. When VPP is below VPPLK, any program or erase operation will result in a error in the status register. WP# = VIL FOR BOOT BLOCK LOCKING
4.0
DESIGN CONSIDERATIONS
The following section discusses recommended design considerations which can improve the robustness of system designs using flash memory.
When WP# = VIL, the boot block is locked and any program or erase operation to the boot block will result in an error in the status register. All other blocks remain unlocked in this condition and can be programmed or erased normally. Note that this feature is overridden and the boot block unlocked when RP# = VHH. 3.3.3 RP# = VHH OR WP# = VIH FOR BOOT BLOCK UNLOCKING
4.1
Power Consumption
Intel flash components contain features designed to reduce power requirements. The following sections will detail how to take advantage of these features. 4.1.1 ACTIVE POWER
Two methods can be used to unlock the boot block: 1. WP# = VIH 2. RP# = VHH If both or either of these two conditions are met, the boot block will be unlocked and can be programmed or erased. The Write Proctection Truth Table, Table 9, clearly defines the write protection methods.
Asserting CE# to a logic-low level and RP# to a logic-high level places the device in the active mode. Refer to the DC Characteristics table for ICCR current values. 4.1.2 AUTOMATIC POWER SAVINGS (APS)
Automatic Power Savings (APS) provides lowpower operation in active mode. Power Reduction Control (PRC) circuitry allows the device to put itself into a low current state when not being accessed. After data is read from the memory array, PRC logic controls the device's power consumption by entering the APS mode where typical ICC current is less than 1 mA. The device stays in this static state with outputs valid until a new location is read. 4.1.3 STANDBY POWER
When CE# is at a logic-high level (VIH), and the device is not programming or erasing, the memory enters in standby mode, which disables much of the
ADVANCE INFORMATION
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AB28F200BR, AB28F400BR
device's circuitry and substantially reduces power consumption. Outputs (DQ0-DQ15 or DQ0-DQ7) are placed in a high-impedance state independent of the status of the OE# signal. When CE# is at logichigh level during program or erase operations, the device will continue to perform the operation and consume corresponding active power until the operation is completed. 4.1.4 DEEP POWER-DOWN MODE
PowerGood) during power-up/down, invalid bus conditions during power-up can be masked, providing yet another level of memory protection. 4.2.1 RP# CONNECTED TO SYSTEM RESET
E
The 5 V Boot Block family supports a low typical ICCD in deep power-down mode, which turns off all circuits to save power. This mode is activated by the RP# pin when it is at a logic-low (GND 0.2 V). Note: BYTE# pin must be at CMOS levels to meet the ICCD specification. During read modes, the RP# pin going low deselects the memory and places the output drivers in a high impedance state. Recovery from the deep power-down state, requires a minimum access time of tPHQV. RP# transitions to VIL, or turning power off to the device will clear the status register. During an program or erase operation, RP# going low for time tPLPH will abort the operation, but the location's memory contents will no longer valid and additional timing must be met. See Section 3.1.5 and Figure 13 and Table 10 for additional information.
Using RP# properly during system reset is important with automated program/erase devices because the system expects to read from the flash memory when it comes out of reset. If a CPU reset occurs without a flash memory reset, proper CPU initialization would not occur because the flash memory may in a mode other than Read Array. Intel's Flash memories allow proper CPU initialization following a system reset by connecting the RP# pin to the same RESET# signal that resets the system CPU.
4.3
4.3.1
Board Design
POWER SUPPLY DECOUPLING
Flash memory's switching characteristics require careful decoupling methods. System designers should consider three supply current issues: standby current levels (ICCS), active current levels (ICCR), and transient peaks produced by falling and rising edges of CE#. Transient current magnitudes depend on the device outputs' capacitive and inductive loading. Two-line control and proper decoupling capacitor selection will suppress these transient voltage peaks. Each flash device should have a 0.1 F ceramic capacitor connected between VCC and GND, and between VPP and GND. These high-frequency, inherently low-inductance capacitors should be placed as close as possible to the package leads. 4.3.2 VPP TRACE ON PRINTED CIRCUIT BOARDS
4.2
Power-Up/Down Operation
The device protects against accidental block erasure or programming during power transitions. Power supply sequencing is not required, so either VPP or VCC can power-up first. The CUI defaults to the read mode after power-up, but the system must drop CE# low or present an address to receive valid data at the outputs. A system designer must guard against spurious writes when VCC voltages are above VLKO and VPP is active. Since both WE# and CE# must be low for a command write, driving either signal to VIH will inhibit writes to the device. Additionally, alteration of memory can only occur after successful completion of a two-step command sequences. The device is also disabled until RP# is brought to VIH, regardless of the state of its control inputs. By holding the device in reset (RP# connected to system
In-system updates to the flash memory requires special consideration of the VPP power supply trace by the printed circuit board designer. Since the VPP pin supplies the current for programming and erasing, it should have similar trace widths and layout considerations as given to the VCC power supply trace. Adequate VPP supply traces, and decoupling capacitors placed adjacent to the component, will decrease spikes and overshoots.
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5.0 5.1
AB28F200BR, AB28F400BR
ELECTRICAL SPECIFICATIONS Absolute Maximum Ratings*
NOTICE: This document contains information on products in the sampling and initial production phases of development. The specifications are subject to change without notice. Verify with your local Intel Sales office that you have the latest datasheet before finalizing a design.
Operating Temperature During Read........................... -40C to +125C During Block Erase and Word/Byte Program ........ -40C to +125C Temperature Under Bias........ -40C to +125C Storage Temperature ................... -65C to +125C Voltage on Any Pin (except VCC, VPP, A9 and RP#) with Respect to GND ............. -2.0V to +7.0V(1) Voltage on Pin RP# or Pin A9 with Respect to GND ......... -2.0V to +13.5V(1,2) VPP Program Voltage with Respect to GND during Block Erase and Word/Byte Program .... -2.0V to +14.0V(1,2) VCC Supply Voltage with Respect to GND ............. -2.0V to +7.0V(1) Output Short Circuit Current................... 100 mA (3)
* WARNING: Stressing the device beyond the "Absolute Maximum Ratings" may cause permanent damage. These are stress ratings only. Operation beyond the "Operating Conditions" is not recommended and extended exposure beyond the "Operating Conditions" may effect device reliability. NOTES: 1. Minimum DC voltage is -0.5V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <20 ns. Maximum DC voltage on input/output pins is VCC + 0.5V which, during transitions, may overshoot to VCC + 2.0V for periods <20 ns. 2. Maximum DC voltage on VPP may overshoot to +14.0V for periods <20 ns. Maximum DC voltage on RP# or A9 may overshoot to 13.5V for periods <20 ns. 3. Output shorted for no more than one second. No more than one output shorted at a time.
5.2
Operating Conditions
Parameter Operating Temperature VCC Supply Voltage (10%) Notes Min -40 4.50 Max +125 5.50 Units C Volts
Symbol TA VCC
5.3
Capacitance
Parameter Input Capacitance Output Capacitance Note 1 1 Typ 6 10 Max 8 12 Unit pF pF Conditions VIN = 0 V VOUT = 0 V
TA = 25 C, f = 1 MHz Symbol CIN COUT
NOTES: 1. Sampled, not 100% tested.
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AB28F200BR, AB28F400BR
5.4
Sym IIL ILO ICCS
DC Characteristics--Automotive Temperature
Parameter Input Load Current Output Leakage Current VCC Standby Current Notes 1 1 1,3 0.8 Min Typ Max 5.0 10 2.5 Unit A A mA CE# = VIL
E
Test Conditions VCC = VCCMax VIN = VCC or GND VCC = VCC Max VIN = VCC or GND TTL VCC = VCC Max f = 10 MHz IOUT = 0 mA Inputs = VIL or VIH A CMOS VCC = VCC Max CE# = VIL f = 10 MHz IOUT = 0 mA Inputs = VIL or VIH
70
250
ICCD
VCC Deep Power-Down Current
1
0.2
105
A
VCC = VCC Max VIN = VCC or GND RP# = GND 0.2 V
ICCR
VCC Read Current for Word or Byte
1,5,6
55
70
mA CE# = VIL
TTL VCC = VCC Max f = 10 MHz IOUT = 0 mA Inputs = VIL or VIH
50
70
mA CE = VIL
CMOS VCC = VCC Max f = 10 MHz (5 V) 5 MHz (3.3 V) IOUT = 0 mA Inputs = GND 0.2 V or VCC 0.2 V
ICCW
VCC Program Current for Word or Byte
1,4
25 20
50 45
mA mA
VPP = VPPH1 (at 5 V) Program in Progress VPP = VPPH2 (at 12 V) Program in Progress
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ADVANCE INFORMATION
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5.4
Sym ICCE ICCES IPPS IPPD IPPR IPPW
AB28F200BR, AB28F400BR
DC Characteristics--Automotive Temperature (Continued)
Parameter VCC Erase Current Notes 1,4 Min Typ 22 18 VCC Erase Suspend Current 1,2 5 Max 45 40 12.0 Unit mA mA mA Test Conditions VPP = VPPH1 (at 5 V) Block Ers. in Progress VPP = VPPH2 (at 12 V) Block Ers. in Progress CE# = VIH Block Erase Suspend VPP = VPPH1 (at 5 V) VPP Standby Current VPP Deep Power-Down Current VPP Read Current VPP Program Current for Word or Byte 1 1 1 1 5 0.2 50 13 15 10 200 30 A A A mA VPP VCC RP# = GND 0.2 V VPP >VCC VPP = VPPH VPP = VPPH1 (at 5 V) Program in Progress 8 25 mA VPP = VPPH VPP = VPPH2 (at 12 V) Program in Progress
IPPE
VPP Erase Current
1
15
25
mA
VPP = VPPH VPP = VPPH1 (at 5 V) Block Ers. in Progress
10
20
mA
VPP = VPPH VPP = VPPH2 (at 12 V) Block Ers. in Progress
IPPES
VPP Erase Suspend Current
1
50
200
A
VPP = VPPH Block Erase Suspend in Progress
IRP# IID VID VIL VIH
RP# Boot Block Unlock Current A9 Intelligent Identifier Current A9 Intelligent Identifier Voltage Input Low Voltage Input High Voltage
1,4 1,4 11.4 -0.5 2.0
500 500 12.6 0.8 VCC 0.5V 0.45
A A V V V
RP# = VHH VPP = 12 V A9 = VID
VOL
Output Low Voltage (TTL)
V
VCC = VCC Min VPP = 12 V IOL = 5.8 mA
ADVANCE INFORMATION
29
AB28F200BR, AB28F400BR
5.4
Sym VOH1 VOH2 VPPLK VPPH1 VPPH2 VLKO VHH
DC Characteristics--Automotive Temperature (Continued)
Parameter Output High Voltage (TTL) Output High Voltage (CMOS) VPP Lock-Out Voltage VPP (Program/Erase Operations) VPP (Program/Erase Operations) VCC Program/Erase Lock Voltage RP# Unlock Voltage 2.0 11.4 12.6 V V 11.4 12.6 V VPP at 12 V 3 Notes Min 2.4 VCC - 0.4 V 0.0 4.5 1.5 5.5 Typ Max Unit V V V V
E
Test Conditions
VCC = VCC Min IOH = -1.5 mA VCC = VCC Min IOH = -100 A Complete Write Protection VPP at 5 V
Boot Block Program/ Erase VPP = 12 V
NOTES: 1. All currents are in RMS unless otherwise noted. Typical values at VCC = 5.0V, T = +25C. These currents are valid for all product versions (packages and speeds). 2. ICCES is specified with the device de-selected. If the devices is read while in erase suspend mode, current draw is the sum of ICCES and ICCR. 3. Block erases and word/byte program operations are inhibited when VPP = VPPLK, and not guaranteed in the range between VPPH1 and VPPLK. 4. Sampled, not 100% tested. 5. Automatic Power Savings (APS) reduces ICCR to less than 1 mA typical, in static operation. 6. CMOS Inputs are either VCC 0.2V or GND 0.2V. TTL Inputs are either VIL or VIH.
30
ADVANCE INFORMATION
E
3.0 INPUT 0.0 1.5 TEST POINTS
AB28F200BR, AB28F400BR
1.5
OUTPUT
0599-10
NOTE: AC test inputs are driven at 3.0 V for a logic "1" and 0.0 V for a logic "0." Input timing begins, and output timing ends, at 1.5 V. Input rise and fall times (10% to 90%) <10 ns.
Figure 9. High Speed Test Waveform
2.4 INPUT 0.45
2.0 TEST POINTS 0.8
2.0 OUTPUT 0.8
0599-11
NOTE: AC test inputs driven at VOH (2.4 VTTL) for logic "1" and VOL (0.45 VTTL) for logic "0." Input timing begins at VIH (2.0 VTTL) and VIL (0.8 VTTL) . Output timing ends at VIH and VIL. Input rise and fall times (10% to 90%) <10 ns.
Figure 10. Standard Test Waveform
ADVANCE INFORMATION
31
AB28F200BR, AB28F400BR
E
RP# (P)
VCC
VIH VIL
R1
t PLPH (A) Reset during Read Mode
t PHQV t PHWL t PHEL
DEVICE UNDER TEST CL R2
OUT
Abort Complete
t PLRH
RP# (P)
VIH V IL
t PHQV t PHWL t PHEL
t PLPH (B) Reset during Program or Block Erase, t PLPH < t PLRH
0599-12
NOTE: CL includes jig capacitance.
Abort Deep Complete PowerDown
Figure 11. Test Configuration Test Configuration Component Values Test Configuration 5 V Standard Test 5 V High-Speed Test CL (pF) R1 () R2 () 100 30 580 580 390 390
RP# (P)
VIH V IL
t PLRH
t PHQV t PHWL t PHEL
t PLPH
(C) Reset Program or Block Erase, t PLPH > t PLRH
0599-13
Figure 12. AC Waveform for Reset Operation Table 10. Reset Specifications(1) Sym tPLPH tPLRH
1. 2. 3. 4.
Parameter RP# Pulse Low Time RP# Low to Reset during Prog/Erase
Min 60
Max
Unit ns
12
s
If RP# is tied to VCC, these specs are not applicable. These specifications are valid for all product versions (packages and speeds). If RP# is asserted while a program or block erase, is not executing, the reset will complete within tPLPH. A reset time, tPHQV, is required after tPLRH until outputs are valid. See Section 3.1.5 for detailed information.
32
ADVANCE INFORMATION
E
5.5
# R1 R2 R3 R4 R5 R6 R7 R8 R9 R10 tAVAV tAVQV tELQV tGLQV tELQX tGLQX tEHQZ
AB28F200BR, AB28F400BR
AC Characteristics--Read Operations
Speed Sym Parameter VCC Load Notes Read Cycle Time Address to Output Delay CE# to Output Delay OE# to Output Delay RP# to Output Delay CE# to Output in Low Z OE# to Output in Low Z CE# to Output in High Z OE# to Output in High Z Output Hold from Address, CE#, or OE# Change, Whichever Occurs First 3 3 3 3 3 0 0 0 25 25 2 2 Min 80 80 80 40 550 -80 5 V 10%(5) 100 pF Max ns ns ns ns ns ns ns ns ns ns Unit
tPHQV
tGHQZ tOH
NOTES: 1. See AC Input/Output Reference Waveform for timing measurements. 2. OE# may be delayed up to tCE-tOE after the falling edge of CE# without impact on tCE. 3. Sampled, but not 100% tested. 4. See Test Configuration (Figure 11), 5 V High-Speed Test component values. 5. See Test Configuration (Figure 11), 5 V Standard Test component values. 6. Dynamic BYTE# switching between word and byte modes is not supported. Mode changes must be made when the device is in deep power-down or powered down.
ADVANCE INFORMATION
33
AB28F200BR, AB28F400BR
E
Device and Address Selection Address Stable R1 Data Valid Standby R8 R9 R7 R4 R3 Valid Output R2 R5
0599-14
VIH ADDRESSES (A) VIL CE# (E) VIH VIL VIH OE# (G) VIL VIH WE# (W) VIL VOH DATA (D/Q) VOL RP#(P) VIH VIL High Z
R10 High Z
R6
Figure 13. AC Waveforms for Read Operations
5.6
Erase and Program Timings--Automotive Temperature
VPP Parameter 5 V 10% Typ 0.6 1.0 2.0 1.3 Max 7.8 15.4 16.8 8.4 12 V 5% Typ 0.34 0.8 1.4 0.9 Max 4.0 7.1 6.8 3.4 Units s s s s
VCC = 5 V 10%
Boot/Parameter Block Erase Time Main Block Erase Time Main Block Write Time (Byte Mode) Main Block Write Time (Word Mode)
NOTES: 1. All numbers are sampled, not 100% tested. 2. Max erase times are specified under worst case conditions. The max erase times are tested at the same value independent of VCC and VPP. See Note 3 for typical conditions. 3. Typical conditions are 25 C with VCC and VPP at the center of the specified voltage range. Production programming using VCC = 5.0 V, VPP = 12.0 V typically results in a 60% reduction in programming time. 4. Contact your Intel representative for information regarding maximum byte/word write specifications. 5. Max program times are guaranteed for the two parameter blocks and 96-KB main block only.
34
ADVANCE INFORMATION
E
5.7
# W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 tAVAV tWP tWPH
AB28F200BR, AB28F400BR
AC Characteristics--Write Operations
Sym Write Cycle Time RP# High Recovery to WE# (CE#) Going Low CE# (WE#) Setup to WE# (CE#) Going Low Write Pulse Width Data Setup to WE# (CE#) Going High Address Setup to WE# (CE#) Going High CE# (WE#) Hold from WE# (CE#) High Data Hold from WE# (CE#) High Address Hold from WE# (CE#) High Write Pulse Width High VCC = 5 V 5% 6,8 5,8 6,8 5,8 7,8 4 3 9 4 3 Parameter Note Min 80 450 0 60 60 60 0 0 0 10 100 100 0 0 100 Max Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
tPHWL (tPHEL) tELWL (tWLEL)
tDVWH (tDVEH) tAVWH (tAVEH) tWHEH (tEHWH) tWHDX (tEHDX) tWHAX (tEHAX)
W10 tPHHWH (tPHHEH) W11 tVPWH (tVPEH) W12 tQVPH W13 tQVVL W14 tPHBR
RP# VHH Setup to WE# (CE#) Going High VPP Setup to WE# (CE#) Going High RP# VHH Hold from Valid SRD VPP Hold from Valid SRD Boot Block Lock Delay
NOTES: 1. Read timing characteristics during program and erase operations are the same as during read-only operations. Refer toAC Characteristics--Read-Only Operations. 2. The on-chip WSM completely automates program/erase operations; program/erase algorithms are now controlled internally which includes verify operations. 3. Refer to command definition table for valid AIN. (Table 7) 4. Refer to command definition table for valid DIN. (Table 7) 5. Program/erase durations are measured to valid SRD data (successful operation, SR.7 = 1). 6. For boot block program/erase, RP# should be held at VHH or WP# should be held at VIH until operation completes successfully. 7. Time tPHBR is required for successful locking of the boot block. 8. Sampled, but not 100% tested. 9. Write pulse width (tWP) is defined from CE# or WE# going low (whichever goes low last) to CE# or WE# going high (whichever goes high first). Hence, tWP = tWLWH = tELEH = tWLEH = tELWH. 10. Write pulse width high (tWPH) is defined from CE# or WE# going high (whichever goes high first) to CE# or WE# going low (whichever goes low first). Hence, tWPH = tWHWL = tEHEL = tWHEL = tEHWL.
ADVANCE INFORMATION
35
AB28F200BR, AB28F400BR
E
B C D E F
AIN
W0 W5
A VIH VIL VIH CE# (WE#) [E(W)] VIL VIH OE# [G] VIL VIH VIL
W4 W2
ADDRESSES [A]
AIN
W8
W6
W9
WE# (CE#) [W(E)]
W3 W7
VIH DATA [D/Q] VIL VHH VIH VIL VIH VIL VPPH2 VPP [V] V 1 PPH VPPLK VIL
High Z
DIN
DIN
W10
Valid SRD
W12
DIN
6.5V RP# [P] WP#
W1
W11
W13
0599-15
NOTE: A. VCC power-up and standby. B. Write Program Set-Up or Erase Set-Up Command. C. Write valid address & data (if program operation) or Erase Confirm (if erase operation) command. D. Automated program or erase delay. E. Read status register data. F. Write Read Array command if write operations are completed.
Figure 14. AC Waveforms for Write Operations
36
ADVANCE INFORMATION
E
6.0
Package B = PSOP
AB28F200BR, AB28F400BR
ORDERING INFORMATION
AB2 8 F 4 0 0 BR - T 8 0
Operating Temperature A = Automotive Temperature
Access Speed (ns) T = Top Boot B = Bottom Boot Voltage Options (VPP) 5 = 5 or 12 Architecture B = Boot Block
Product line designator for all Intel(R) Flash products Density/Organization X00 = x8/x16 Selectable (X = 2, 4)
VALID COMBINATIONS Automotive 2M 4M 44-Lead PSOP AB28F200BR-T80 AB28F200BR-B80 AB28F400BR-T80 AB28F400BR-B80
ADVANCE INFORMATION
37
AB28F200BR, AB28F400BR
7.0
ADDITIONAL INFORMATION
Document
E
Order Number 290830
Flash Memory Databook
NOTES: 1. Please call the Intel Literature Center at (800) 548-4725 to request Intel documentation International customers should . contact their local Intel or distribution sales office. 2. Visit Intel's World Wide Web home page at http://www.Intel.com for technical documentation and tools.
38
ADVANCE INFORMATION
E
Current State Read Array Program Setup Program: Not Complete Program: Complete Erase Setup SR.7 Data When Read Read Array (FFH) Read Array Program Setup (10/40H) Program Setup Erase Setup (20H) Erase Setup Erase Confirm (D0H) Erase Susp. (B0H) "1" Array Read Array "1" Status
AB28F200BR, AB28F400BR
APPENDIX A WSM: CURRENT-NEXT STATE CHART
Write State Machine Current/Next States
Command Input (and Next State) Erase Resume (D0H) Read Status (70H) Read Status Clear Status (50H) Read Array Read ID (90H)
Read ID
Program (Command Input = Data to be programmed)
"0"
Status
Program
"1"
Status
Read Array
Program Setup
Erase Setup
Read Array Erase Cmd. Error
Read Status
Read Array
Read ID
Erase Command Error "1" Status Erase
Erase
Erase Command Error
Erase Cmd. Error Erase: Not Complete Erase: Complete Erase Suspend to Status Erase Suspend to Array Read Status Read Identifier
"1"
Status
Read Array
Program Setup
Erase Setup
Read Array
Read Status
Read Array
Read ID
"0"
Status
Erase
Erase Susp. to Status
Erase
"1"
Status
Read Array Erase Susp. to Array Erase Susp. to Array Read Array Read Array
Program Setup
Erase Setup Erase Susp. to Array Erase Susp. to Array Erase Setup Erase Setup
Read Array Erase Susp. to Array Erase Susp. to Array
Read Status
Read Array
Read ID
"1"
Status
Res'd.
Erase
Erase
Erase Erase Susp. to Susp. to Status Array Erase Erase Susp. to Susp. to Status Array Read Status Read Status Read Array Read Array
Res'd.
"1"
Array
Res'd.
Erase
Erase
Res'd.
"1"
Status
Program Setup Program Setup
Read Array
Read ID
"1"
ID
Read Array
Read ID
ADVANCE INFORMATION
39
AB28F200BR, AB28F400BR
E
APPENDIX B PRODUCT BLOCK DIAGRAM
7769_01
40
ADVANCE INFORMATION

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